Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process
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Laser Annealing of MOCVD Deposited Ferroelectric SrBi 2 Ta 2 O 9 , Pb ( ZrXTi 1 - X ) O 3 and CeMnO 3 Thin Films
Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferr...
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Photoconductive properties of SrBi2Ta2O9 thin ®lms in the 250±400 nm wavelength range were investigated. The ®lms were deposited on Pt/SiO2/Si substrates using the Chemical Solution Deposition and were crystallized by conventional thermal annealing at 850 C. One sensitivity maximum was observed in the spectral distribution of the photoconductive signal and was attributed to band-to-band generat...
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This chapter provides a simple room temperature chemical precursor solution preparation techniques for the fabrication of pyrochlore-free crystalline films and some of the representative properties of SrBi2Ta2O9 thin film are exhibited as an example. The detailed fabrication procedure of SrBi2Ta2O9-Bi3TaTiO9 thin films will be presented in next chapter. However, for the fabrication procedure of...
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